InGaN/GaN/AlGaN RTD with Inherent Extreme Low Leakage Current High Current Rising Rate

摘要

In order to explore better diode candidates for gate controlled FET applications at about ±0.1 V DC power supply with extreme low subthreshold swing,current-voltage characteristics of several InGaN/GaN/AlGaN Resonant Tunneling Diodes(RTDs)were investigated by device simulation with Non-Equilibrium Green's Function(NEGF)method on Technology Computer Aided Design(TCAD)platform.Their electric switching characteristic parameters were extracted from the simulation results and contrasted with the corresponding results reported recently.The comparison results indicate that sample 1-with thicknesses of its Ino.21Gao.79N/GaN/Ino.14Gao.86N/Alo.1GaN layers are respectively 4-3-4 times of each crystal constant itself-is the best potential candidate of them with inherent forward(backward)threshold voltage at 50 mV(-20.3 mV),off current at 2.4×10~(-52)μA/μm,on-off current ratio at 3e8 and extreme high inherent forward(backward)current rising rate with its reciprocal at 5.90 mV/dec(-2.39 mV/dec).Sample 5-with thicknesses of its In_(0.21)Ga_(0.79)N/GaN/In_(0.14)Ga_(0.86)N/Al_(0.1)GaN layers are respectively 5-4-5 times of each crystal constant itself-and sample 6-with thicknesses of its In_(0.21)Ga_(0.79)N/GaN/In_(0.14)Ga_(0.86)N/Al_(0.1)GaN layers are respectively 5-6-5 times of each crystal constant itself-are better optional candidates with relatively lowered on-off current ratio at 6×10~4(1.4×10~7)and higher inherent forward(backward)current rising rate with their reciprocals at 10.46 mV/dec(-4.18 mV/dec)and 7.00 mV/dec(-2.80 mV/dec).