Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

著录项

• 来源
  《中国物理：英文版》 |2014年第3期|597-601|共5页
• 作者

  Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May;

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• 作者单位

  Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词