Excellent Photoelectrical Properties of ZnO Thin Film based on ZnO /epoxy-resin Ink for UV-Light Detectors

摘要

This paper presents the photoconductive properties of ZnO thin film prepared by simple drop-cast technique using an ink of ZnO/epoxy-resin on glass substrate. The prepared film is investigated for structural analysis under X-ray diffraction technique which confirms the nanocrystalline nature of the prepared thin film, whereas, the UV-photodetection ability of the prepared film has been investigated under UV light of wavelength ~ 365nm light in ambient environment at room temperature in parallel electrode geometry (silver/ZnO/silver). The prepared thin film showed excellent UV photodetection ability with a change in current greater than two orders (>10~2) and a photoresponse better than 5x10~4 (%). Thus, the present technique pave the way to use a cost effective approach to develop excellent UV photodetectors contrary the existing complex and expensive sensor technology.