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Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

机译:用于紫外线探测器的Mn掺杂ZnO薄膜的结构,光学和光电性质

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Mn-doped ZnO (MZO) films were prepared on glass substrates using sol–gel dip-coating technology. The microstructural, morphological, optical and photoelectric properties of MZO films were investigated at different withdrawal speeds (WS: 20, 40, 60 and 80 mm s ~(?1) ). The X-ray diffraction (XRD) patterns showed that all the films obtained were polycrystalline with a hexagonal structure, and the highest crystallinity of MZO films was observed as films were deposited at 40 mm s ~(?1) . The UV-Vis spectra revealed that the average optical transmittance of all samples was over 60% and the energy band gap of films decreased from 3.616 to 3.254 eV with the increase in withdrawal speed. The formed Au/MZO/Au photodetectors (PDs) indicate that a device prepared at 40 mm s ~(?1) shows superior properties both in response speed and detection capability, and the rise time is 1.871 s and fall time is 3.309 s at 365 nm for 3 V bias and the detectivity ( D *) reaches ~1.7 × 10 ~(10) Jones. Moreover, the responsivity of PDs is also affected by the distance between Au electrodes and external bias. This research provides a simple way to fabricate the UV PDs based on MZO films with faster response and higher detectivity.
机译:使用溶胶-凝胶浸涂技术在玻璃基板上制备了锰掺杂的ZnO(MZO)膜。研究了在不同的撤出速度(WS:20、40、60和80 mm s〜(?1))下MZO薄膜的微观结构,形态,光学和光电性能。 X射线衍射(XRD)图表明,所获得的所有膜都是具有六边形结构的多晶
质,并且当在40mm s〜(φ1)下沉积膜时,观察到了MZO膜的最高结晶度。 UV-Vis光谱表明,所有样品的平均光学透射率均超过60%,并且随着抽出速度的增加,薄膜的能带隙从3.616 eV降低到3.254 eV。形成的Au / MZO / Au光电探测器(PDs)表明,在40 mm s〜(?1)处制备的器件在响应速度和检测能力上均显示出优异的性能,并且在1.85 s处的上升时间为1.871 s,下降时间为3.309 s。在3 V偏压下为365 nm,探测灵敏度(D *)达到〜1.7×10〜(10)Jones。此外,PD的响应度还受Au电极之间的距离和外部偏置的影响。这项研究提供了一种简单的方法来制造基于MZO膜的UV PD,具有更快的响应速度和更高的检测能力。

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