Research on responsivity of Si-based p-i-n Quadrant Photodiode Detector interact with millisecond pulsed laser

摘要

Si-based p-i-n Quadrant Photodiode Detector(QPD) has be1en widely used in experimental, military and civilian fieldsfor its spot position detection characteristics. In optoelectronic countermeasure technology, there are defects in thedetector after Si-based p-i-n Quadrant Photodiode Detector irradiated with laser, and detectivity is affected, nonlinearchanges of dark current and responsivity is produced.Responsivity is an important parameter of photodetector. In this paper, the experimental research of responsivity in theprocess of interaction between millisecond pulsed laser and Si-based p-i-n Quadrant Photodiode Detector is carried out.It is gotten that the relationship between responsivity with laser energy density and laser pulse width in the process ofSi-based p-i-n Quadrant Photodiode Detector irradiated by 1064nm millisecond pulse laser. The result of this researchestablish the foundation to investigate electrical damage of Si-based p-i-n Quadrant Photodiode Detector interacting withmillisecond pulsed laser.