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Single Crystal Silicon: Surface Evolution Regularity of Chemical Etching and Effect of Nano Jet Polishing on Damage Precursor

机译:单晶硅:纳米喷射抛光对损伤前体的化学蚀刻和效果的表面演化规律

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Single crystal silicon is a chemically active semiconductor material with good processing characteristics. With thedevelopment of technology, the role of single crystal silicon components in the field of ICF is becoming more and moreimportant. Restricted by traditional processing method and MRF, damage precursors such as scratches and impuritiesstill remain on the surface after processing. That may influence the performance of the elements.In this paper, we study the effect on the surface by two chemical etching methods and the influence on the damageprecursors of nano jet polishing. We used HF solution/HNO_3 and KOH/ isopropanol to etch the surface of the element.When the etching depth comes to 0.2 μm, pits and scratches could be easily found on the surface. After the etchingprocess, the element was processed by nano jet polishing and the roughness decreased from 1.264nm to 0.986nm.Weused nano jet polishing method to process the element polished by MRF in order to research the evolution of comet-tailscratch. The In-situ tracking method was also applied in this study. After the polishing process, the W-D (width to depthratio) increased from 30.51 to 45.84. The scratch was deactivated and the PTA (photothermal absorption) decreased from1.5413nA to 1.3500nA. The Ce impurities were also removed. Its concentration decreased from 0.1162mg/L to0.0005mg/L and the PTA of the element decreased from 0.3044nA to 0.0652nA.From the research, we can easily know that the subsurface damage exposed after the etching process. That may lay thefoundation of the nondestructive processing of single crystal silicon. After nano jet polishing process, the quality of theelement became better. The roughness and concentration of Ce impurities decreased. The damage precursors weredeactivated and the PTA decreased. In a word, chemical etching could expose the surface damage of single crystal siliconand nano jet polishing can improve the laser damage resistance.
机译:单晶硅是一种具有良好加工特性的化学活性半导体材料。与之技术的开发,ICF领域的单晶硅组件的作用变得越来越多重要的。受传统加工方法和MRF的限制,损伤前体如划痕和杂质处理后仍然保持在表面上。这可能影响元素的性能。在本文中,我们通过两种化学蚀刻方法对表面的影响和对损伤的影响研究纳米喷射抛光前体。我们使用HF溶液/ HNO_3和KOH /异丙醇来蚀刻元件的表面。当蚀刻深度达到0.2μm时,在表面上可以容易地发现凹坑和划痕。在蚀刻之后工艺,该元件通过纳米喷射抛光加工,粗糙度从1.264nm降低至0.986nm.we使用纳米喷射抛光方法来处理MRF抛光的元素,以研究彗星尾部的演变划痕。本研究还应用了原位跟踪方法。在抛光过程之后,W-D(宽度深度比率)从30.51增加到45.84。划痕被停用,并且PTA(光热吸收)从1.5413NA至1.3500NA。 CE杂质也被除去。它的浓度从0.1162mg / l减少到0.0005mg / L和元素的PTA从0.3044NA降低至0.0652NA。从研究来看,我们很容易知道在蚀刻过程之后暴露的地下损坏。这可能会铺设单晶硅无损加工的基础。纳米喷射抛光过程后,质量元素变得更好。 Ce杂质的粗糙度和浓度降低。损伤前体是停用并且PTA减少。总之,化学蚀刻可能暴露单晶硅的表面损坏纳米喷射抛光可以提高激光损伤阻力。

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