Donor-semiconductor disk regenerating method, involves polishing damaged and polished side surfaces of semiconductor disk, polishing edge of disk before polishing side surfaces, and extracting disk from mono-crystal of silicon

摘要

The method involves separating a layer of a donor-semiconductor disk produced by application of ion implantation. Side surface of the donor-semiconductor disk lying opposite to a damage side surface is polished. The damaged and the polished side surfaces are alone polished. An oxide layer is removed from the donor-semiconductor disk before polishing the side surfaces. An edge of the donor-semiconductor disk is polished before polishing the side surfaces. The donor-semiconductor disk is extracted from a mono-crystal of silicon. An independent claim is also included for a regenerated donor-semiconductor disk exhibiting characteristics.