Investigation of Injection- and Radiation-Thermal Processes in Thin Gate Dielectric Films of MIS Structures

摘要

In order to modify the gate dielectric of MIS structures we suggest to implement the injection-thermal treatment which consists in the high-field injection of electrons of set density into the thin dielectric film and the subsequent annealing of the structure. We investigate an influence of modes of the injection-thermal treatment onto the modification of MIS structures. We demonstrate that the processes of MIS structure modification taking place at the injection-thermal treatment in many respects are identical to the processes taking place at the radiation-thermal treatment. We study an influence of modes of the high-field electron injection into the gate dielectric of MIS structure onto densities of charge defects and the injection hardness of samples. Besides, we research an influence of doping of the silicone dioxide film by phosphorus onto the same characteristics.