Spectroscopic Ellipsometry Investigation of CuInSe2 as a Narrow Bandgap Component of Thin Film Tandem Solar Cells

摘要

Spectroscopic ellipsometry (SE) was performed on CuInSe_2 (CIS) thin films and solar cells with a goal toward optimizing this low bandgap absorber for tandem applications. The CIS thin films and the absorbers in devices were deposited by one-stage thermal co-evaporation on silicon and on Mo-coated soda-lime glass substrates in a deposition system that has yielded CuIn_(1-x)Ga_xSe_2 (CIGS) cells with > 17% efficiency using standard thickness (2.0 μm) x = 0.3 absorbers and > 13% using 0.7 μm low-Ga absorbers. In this study, a mapping capability for CIS Cu stoichiometry y = [Cu]/[In] over the film area was established based on a y-dependent parametric dielectric function (ε_1, ε_2) with bandgap critical point E_g decreasing linearly from 1.030 eV for y = 0.7 to 1.016 eV for y = 1.1. In addition, a full set of (ε_1, ε_2) spectra measured for the CIS cell components enables analysis of SE data in terms of an accurate structural model for the device. With this model, spectra in the external quantum efficiency can be predicted, and deviations from this prediction can be attributed to incomplete collection of photogenerated electrons and holes as simulated with a carrier collection profile.