Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry

摘要

Depth profiles of the optical constants, carrier mobility, and carrier density of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films were investigated by real-time characterization by spectroscopic ellipsometry (SE) during argon plasma etching at atmospheric pressure. Spectral analysis revealed that homogeneous etching occurred within 10-15 nm of the top surface, followed by the appearance of a conductive PEDOT phase and surface roughening, which originated from the depth profile of the PEDOT-to-PSS molar concentration ratio. The use of the plasma-etched PEDOT:PSS layer relatively improved the performance of the cupper phthalocyanine (CuPc)/ Ceo organic thin-films solar cells as a hole-transport layer with higher optical transmittance by adjusting the plasma etching condition.