The Influence of the Composition on the Electronic State and Activity of the Semiconductor Surfaces A~(III)B~v-ZnTe, A~(II)B~(VI)-ZnTe

摘要

The surface properties (acid-BASIC, optical, electrophysical) of solid solutions and binary components of A~(III)B~v-A~(II)B~(VI), A~(II)B~(VI)-A~(II)B~(VI) (GaSbB-ZnTe, CdSe-ZnTe) have been examined. The charge state, the surface activity in relation to the gases of different electronic nature and their system changes have been defined. The most active components such as (GASB)_X (ZnTe) 1-_x, (CdSe)_x (ZnTe) 1-_x solid solutions of the extreme compositions recommended as sensor materials on carbon monoxide micro-impurity have been found out.