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Deposition of Tungsten-Doped V_2O_5 Thin Films on Non-Alkali Glass Substrate by RF Magnetron Sputtering for Thermal Insulation

机译:RF磁控溅射在非碱玻璃基板上沉积钨掺杂的V_2O_5薄膜,用于保温

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The thermal insulation function of tungsten-doped vanadium dioxide (V2O5) thin films deposited on non-alkali glass substrate using RF magnetron sputtering was analyzed in this study. Grinded hot-dry V_2O_5 and tungsten powders, mixed in weight ratio of 98.1:1.9 or 97:3, were pressed at 800 psi for 10 min. These compounds were sintered at 550 or 600 °C for 3 hours, in oxygen gas environments (10 sccm and 0 sccm), to several W-doped V_2O_5 targets. The surface morphologies of these targets were analyzed by a SEM, and the crystal structure was characterized by a XRD. The experimental studies with reference to the thermal insulation property of V_2O_5 were conducted under various duration of deposition, substrate temperatures, rf powers and duration of annealing time. The influence of these factors was investigated using the Taguchi method, an orthogonal array L_8. The results show that the targets contain a more homogenous structure and a larger grain size with higher oxygen gas flow rate. With a deposition-parameter combination of 60 min (duration of deposition), 300°C (substrate temperature), 150 W (rf power) and 60 min (duration of annealing time), the optimal thermal insulation temperature, 19.3°C, was observed.
机译:在本研究中分析了使用RF磁控溅射沉积在非碱玻璃基板上的钨掺杂二氧化钒(V2O5)薄膜的隔热功能。研磨的热干燥V_2O_5和钨粉,重量比为98.1:1.9或97:3,在800psi下压制10分钟。将这些化合物在550或600℃下烧结3小时,在氧气环境(10 sccm和0 sccm)中,以几个W掺杂的V_2O_5靶标。通过SEM分析这些靶标的表面形态,晶体结构的特征在于XRD。参考V_2O_5的绝热性能的实验研究在各种沉积,衬底温度,RF功率和退火时间的持续时间下进行。使用Taguchi方法,正交阵列L_8研究了这些因素的影响。结果表明,目标含有更均匀的结构和更大的晶粒尺寸,具有较高的氧气流速。沉积参数组合60分钟(沉积持续时间),300℃(衬底温度),150W(RF功率)和60分钟(退火时间持续时间),最佳的隔热温度,19.3°C,是观察到的。

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