The original correlations in the structural properties and surface activity changes of the CdSe-CdTe system semiconductors

摘要

The influence of the number-average diameter and the average number of the most represented particles on surface-active (acid-base) properties using the semiconductor CdSe-CdTe system is traced. The correlations between structural characteristics (dav, nav) and the acid sites strength (pH of a surface isoelectric state-pHisi ) attract the attention, representing a doubtless practical interest.