机译:Al2O3 / AlGaN / GaN金属氧化物半导体异质结构中“表面施主”的研究:电,结构和化学性质的关联
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
MTA EK, Inst Tech Phys & Mat Sci, Konkoly TM Ut 29-33, H-1121 Budapest, Hungary;
MTA EK, Inst Tech Phys & Mat Sci, Konkoly TM Ut 29-33, H-1121 Budapest, Hungary;
Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany;
Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia;
AlGaN/GaN; MOS-HEMT; Surface donors; Interface states;
机译:通过与温度相关的电导率测量研究Al2O3 / AlGaN / GaN金属氧化物半导体异质结构场效应晶体管中的陷阱效应
机译:通过电反射光谱研究栅金属引起的GaN / AlGaN / GaN异质结构中表面施主密度的降低
机译:通过电反射光谱研究栅金属引起的GaN / AlGaN / GaN异质结构中表面施主密度的降低
机译:AlGaN-GaN-双异质结构中的激光和增益机理:与结构性质的关系
机译:Hybrid Perovskite薄膜和接口TiO2电极表面的研究:光伏应用的纳米级结构和电性能的化学渊源
机译:AlGaN / GaN异质结构上的近表面处理:纳米级电学和结构表征
机译:GaN和GaN / AlGaN异质结构表面的化学性质和电学性质
机译:温度和电子辐射对alGaN / GaN异质结构场效应晶体管电性能的影响