Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface Plasmons

摘要

In this work, we have studied the effect of AuGe alloy nanoparticles deposition on properties of molecular beam epitaxy grown heptalayer coupled InGaAs 5.25 mono-layer quantum-dots (QDs) samples. AuGe 12 nm film was deposited using electron beam evaporator on these samples which were later annealed at 300 °C to create AuGe nanoparticles. SEM measurement confirms formation of AuGe nanoparticles which support surface Plasmon modes. The PL spectra at 20K confirms maximum enhancement of 53% in intensity of peak at ～1123 nm for 300 °C annealed sample in comparison to as-grown (without nanoparticle) sample. Single pixel detectors were fabricated from asgrown and 300°C annealed nanoparticle sample using two level lithography and wet etching process. We have observed two-order and one-order augmentation in responsivity and detectivity from device having nanoparticles compared to the as-grown respectively at 80K. Peak detectivity of 4.2 × 10~7cm.Hz~(1/2)/W at 80K was observed for device having nanoparticles. Around 30% increment in spectral response having peak around 5μm at -1V bias for device having AuGe nanoparticles compared to the as-grown device was observed. The observed enhancement is due to increase light trapping or light scattering into the device by nanoparticles. Demonstration of this plasmonic-based detector will move forward the development of high-performance infrared QDs detectors.