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Hybrid hotspot detection using regression model and lithography simulation

机译:使用回归模型和光刻模拟的混合热点检测

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As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is critical to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, the most accurate approach to detect such hotspots is lithography simulation. However, it is known to be time-consuming. This paper proposes a new hotspot detection method with both a regression model and lithography simulation. Experimental results show that the proposed detection method is able to reduce computational time without accuracy loss compared to the conventional lithography simulation based hotspot detection method.
机译:由于最小特征尺寸缩小,晶圆上出现意外的热点。因此,在设计阶段检测和修复这些热点至关重要,以降低开发时间和制造成本。目前,检测此类热点的最准确的方法是光刻模拟。但是,已知是耗时的。本文提出了一种新的热点检测方法,具有回归模型和光刻模拟。实验结果表明,与传统的基于光刻仿真的热点检测方法相比,该试验方法能够减少计算时间而无需精度损耗。

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