Current Flow Mechanism In GaAs Solar Cells With GaInAs Quantum Dots

摘要

Resistance-less dark IV-curves of GaAs solar cells with and without quantum-dimensional objects allied to both quantum dot and quantum well have been obtained and analyzed. Anomalous large increase of the pre-exponential factors was observed in tested (with quantum objects) p-n junctions. According to proposed interpretation embedding of quantum objects in p-n junction created new current flow mechanisms. As a result current flows throught recombination transitions inside quantum objects in space charge region of p-n junction.