Study on the effect of PVDF-TrFE layer to the electrical properties of MIS devices

摘要

This paper investigates the effect of PVDF-TrFE layer to the electrical properties of MIS device. The MIS (Al/PMMA:TiO2/PVDF-TrFE/Si) structures were fabricated on n-type Si substrate. The results indicate that the properties of MIS improved drastically with PVDF-TrFE layer. I-V and C-V characteristics shows that the MIS has a fast operating voltage approximately 1 V, low leakage current, large capacitance. No hysteresis was observed compared to MIS without PVDF-TrFE layer. The improvement in the electrical properties of MIS (Al/PMMA:TiO2/PVDF-TrFE /Si) is due to the increment in the real permittivity, e' value of the insulator.