Accurate Modeling of Centroid Shift in III-V FETs including Non-linear Potential Profile and Wave-function Penetration

摘要

A quantum mechanical model of charge centroid is presented for III-V FETs. The model takes into account the finite potential barrier at the semiconductor/insulator interface and also the non-linearity of the potential profile. The model takes two energy subbands into account to calculate the centroid shift and has been validated against TCAD simulations.