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Nanopore FET Sensor with Non-Linear Potential Profile
Nanopore FET Sensor with Non-Linear Potential Profile
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机译:纳米孔FET传感器,具有非线性电位型材
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摘要
In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.
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