NANOPORE FET SENSOR WITH NON-LINEAR POTENTIAL PROFILE

摘要

In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprisingi. a source region (310) and a drain region (320), defining a source-drain axis;ii. a channel region (330) between the source region (310) and the drain region (320);iii. a nanopore (400) through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.