Effect of por-SiC buffer layer on the parameters of thin Er_2O_3 layers on silicon carbide substrates

摘要

Using optical absorption and Auger spectrometry techniques, we studied the effect of rapid thermal annealing (RTA) on the properties of erbium oxide films deposited onto a porous silicon carbide buffer layer formed on 4H-SiC substrates. An analysis of atomic composition of the films under investigation as a function of RTA duration was performed. It is shown that phase composition of erbium oxide films on silicon carbide substrates with a porous SiC layer can be changed by varying RTA duration.