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2D Raman band of single-layer and bilayer graphene

机译:单层和双层石墨烯的2D拉曼带

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We present a computational study of the 2D Raman band of single-layer and bilayer graphene within a density-functional-based non-orthogonal tight-binding model. The phonon dispersion is derived perturbatively and the 2D band intensity is calculated in fourth-order quantum perturbation theory within this model. The 2D band intensity is enhanced through resonant processes in which the laser excitation matches an electronic transition and the energy and momentum of the scattered phonons match the difference of those of pairs of electronic states. As a result, the 2D band is dispersive, i.e., its position depends on the laser excitation. Here, we calculate the shift and shape, as well as the dispersion rate, of the 2D band for both single-layer graphene and bilayer graphene. The results are compared to available experimental data.
机译:我们介绍了在密度官能的非正交紧密绑定模型内单层和双层石墨烯的2D拉曼带的计算研究。垂钓性地衍生出声子分散性,并且在该模型中以四阶量子扰动理论计算2D频带强度。通过谐振过程增强了2D带强度,其中激光激发与电子转换匹配和散射声子的能量和动量匹配电子状态对的差异。结果,2D频带是分散的,即其位置取决于激光激发。这里,我们计算单层石墨烯和双层石墨烯的2D带的换档和形状,以及分散速率。将结果与可用的实验数据进行比较。

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