Photoswitching Characteristics of LsNbO_3/ZnO/n-Si Heterojunction

摘要

(001)-oriented LiNbO_3 (LN) ferroelectric films were grown on (100)-oriented n-type Si substrates using 15 nm-thick ZnO layers as buffers by pulse laser deposition technique and the LN/ZnO/n-Si heteroj unctions were fabricated. Obvious photoswitching characteristics to white light were observed when the reverse voltages were applied on the LN/ZnO/n-Si heterojunction. High performance was exhibited, such as a large ON/OFF ratio, short photoresponse time, steady ON or OFF states, and well reversible. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heteroj unctions in this work.