n-ZnO/p-GaAs heterojunction photodiode and fabrication method

摘要

The present invention provides a p-type gallium arsenide layer serving as a substrate, an n-type ZnO layer formed on the p-type gallium arsenide layer as a detector of a UV-visible region, and an ohmic contact n-type formed on one side of the n-type ZnO layer. N-ZnO / p-GaAs comprising a metal, an ohmic contact p-type metal formed under the p-type gallium arsenide layer, and a silicon nitride insulating layer formed on the n-type ZnO layer as a light-transmitting layer of received light Provided is a heterojunction photodiode.