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On damping of an edge dislocation vibrations in a dissipative crystal: limiting cases

机译:耗散晶体中边缘位错振动的阻尼:限制案例

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The expression for the generalized susceptibility of the dislocation obtained earlier was used. The electronic drag mechanism of dislocations is considered. The study of small dislocation oscillations was limited. The contribution of the attenuation of low-frequency bending dislocation vibrations to the overall coefficient of dynamic dislocation drag in the long-wave and short-wave limits is calculated. The damping of short-wave bending dislocation vibrations caused by an external action of an arbitrary frequency has been investigated. The contribution of long-wave bending dislocation vibrations damping in total drag coefficient at an arbitrary frequency is found.
机译:使用前面获得的位错的广义敏感性的表达。考虑错位的电子拖曳机制。小型位错振荡的研究有限。计算了低频弯曲位错振动对长波和短波限制的总体动态位错拖拉的总系数的贡献。研究了由任意频率的外部作用引起的短波弯曲位错振动的阻尼。找到了在任意频率下在总阻力系数中阻尼的长波弯曲位错振动的贡献。

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