First-principles study of migration mechanisms and diffusion of carbon in GaN

摘要

Carbon related defects are readily incorporated in GaN due to its abundance during growth both with MBE and CVD techniques. Employing first-principles calculations we compute the migration barrier of neutral carbon interstitials in the wurtzite GaN crystal. The Minimum Energy Path (MEP) and the migration barriers of these defects are obtained using the Nudged Elastic Band (NEB) method with the climbing image modification (CI-NEB). In addition, the Dimer method is used to verify the results. The results yield a quantitative description of carbon diffusion in the crystal allowing for the determination of the most probable migration paths.