Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors

摘要

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10~(14), 10~(15) and 10~(16) protons/'cm~2 is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10~(13) protons/cm~2 the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.