Temperature Dependence of InGaN/GaN Multiple Quantum Well Solar Cells

摘要

Elements based on nitride family and more specifically,those of the GaN/InGaN family,present a great interest for renewable energy conversion systems as they offer huge potentialities in photovoltaic applications,as example for the realization of concentration solar cells.This interest is linked to the possibility to enlarge the part of the solar energetic spectrum that a solar cell is able to capture thanks to the possibilities of growing multilayers cells with various band-gap and thus,with various absorption bands.In this paper,the performance of InGaN/GaN multiple quantum well MQW solar cells with respect to the N-polar orientation,is investigated.In order to obtain the exact conversion efficiency,the temperature effect as well as the spontaneous and piezoelectric polarization effect are taking into consideration in model.The results reveal that the increase of temperature decreases significantly the MQW solar cell efficiency.Our results and discussion would be helpful in designing and fabricating high efficiency InGaN/GaN solar cell in experiment.