Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Geinf0.83/infSninf0.17/inf epitaxial film on Ge(001) substrate

摘要

Formation of Sn wires on Ge0.83Sn0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.