Spin accumulation in n-Ge on Si with sputtered Mninf5/infGeinf3/infCinf0.8/inf-contacts

摘要

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.