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Temperature Dependent Structural and Optical Properties of Nanostructured Cr Doped CdO Thin Films Prepared by DC Reactive Magnetron Sputtering

机译:纳米结构CR掺杂CDO薄膜的温度依赖性结构和光学性能通过直流反应磁控溅射制备

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Nanostructured Cr doped CdO thin films were deposited by DC reactive magnetron sputtering technique on glass substrates at different substrate temperatures. The structural, electrical and optical properties of Cr doped CdO films were investigated. From XRD data, all the films are highly oriented in the (2 0 0) direction. Surface morphology of the samples has been studied using FESEM and the elemental composition of the films is determined from EDS spectra. The minimum resistivity of 1.92 x 10"4 ii.cm is obtained for the thin film deposited at substrate temperature of 350 °C. The optical transmittance of Cr doped CdO thin films increases with the increase of substrate temperature from room temperature to 350 °C. The optical absorption edge of the films is shifted towards lower wavelengths with increase in the substrate temperature. The optical direct band gap values of Cr doped CdO films increased with the increase of substrate temperature. The increase in optical band gap may be due to improvement in crystallinity of the films and Burstein-Moss shift.
机译:纳米结构CR掺杂CDO薄膜通过DC反应磁控溅射技术沉积在不同基板温度下的玻璃基板上。研究了Cr掺杂CDO膜的结构,电气和光学性质。从XRD数据中,所有胶片都在(2 0 0)方向上高度取向。已经使用FeSEM研究了样品的表面形态,并从EDS光谱确定膜的元素组成。获得1.92×10“4 IICm的最小电阻率为350℃的底物温度沉积的薄膜获得。Cr掺杂Cdo薄膜的光学透射率随着室温的增加而增加到350°C 。薄膜的光学吸收边缘随衬底温度的增加而朝下波长移位。Cr掺杂CDO膜的光学直接带隙值随衬底温度的增加而增加。光带隙的增加可能是由于改进导致的在薄膜的结晶度和Burstein-Moss转变。

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