Fabrication of Group IIIA Layered Sulfide Semiconductor Nanostructures by Physical Vapor Deposition Process and Their Enhanced Optical and Electronic Properties

摘要

We report on the fabrication of various high quality GaS nanostructures (angular nanobelts, nanowedges and nanotubes) and In_2S_3 nanostructures (tapered nanorods, nanobelts and nanowires) by catalyst assisted thermal evaporation process. The morphology and structures of the products were controlled by temperature and position of the substrates with respect to the source material. The morphologies of GaS and In_2S_3 nanostructures were examined by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and energy dispersive spectroscopy (EDS). The optical and electronic properties of the synthesized materials were investigated in order to obtain a better fundamental understanding of the structure-property relationships in these materials which can be extended to other layered sulfide materials systems.