A Thermodynamic Interpretation of PVT Growth of Single Crystal SiC Material and Challenges in Reducing Dislocations

摘要

The issues regarding the methods for the reduction of the densities of elemental dislocations such as the basal plane dislocation (BPD) and the threading screw dislocation (TSD) are discussed. We show that the pressure-dependent Si-C binary phase diagram is useful for the suppression of dislocation-generating foreign phases. In addition, recent progress on dislocation reduction in viewpoint of the process control of PVT growth is briefly reviewed. In particular, a specific behavior of 1c TSDs observed in the PVT growth of 4H-SiC is described in detail.