Power Electronic Module Packaging at UA

摘要

Power electronic modules incorporating silicon carbide (SiC) and gallium nitride (GaN) power semiconductors enable many power electronic system applications otherwise not possible for their silicon counterparts. These power electronic modules are desired to operate at junction temperatures of greater than 200°C. As such, the design and fabrication of power electronic modules become more challenging and involve several multi-disciplinary engineering expertise. This paper addresses the educational and research efforts in power electronic module packaging at the University of Arkansas.