Characterization and Performance of D-mode GaN HEMT Transistor Used in a Cascode Configuration

摘要

Cascode configured D-mode GaN HEMT device performance is reported in this paper. The basic parameters of the D-mode HEMT will be covered as well as the integration of the cascode configuration into the PQFN package. Finally 500 volt 3.3 amp switching characteristics of the cascode will be discussed showing the excellent switching performance with voltage slew rates as large as 70 V/ns being measured.