Next generation CMOS architectures tend to thin-film devices and multi-gate devices, such as FinFET orTriGate [1,2], and ultimately to Gate-All-Around devices thanks to their higher electrostatics immunity at short gate length compared to conventional planar CMOS. This paper presents recent optimizations of ebeam lithography using HSQ (Hydogen Silses Quioxane, H_8Si_8O_(12)) resist, used to form self-aligned cavities and finally gate-all-around or double-gated devices. HSQ has demonstrated many features making it an attractive candidate for such applications: it is a high-resolution [3] and low Line-Edge-Roughness [4] negative tone inorganic resist for electron beam lithography [5] that can be converted into amorphous silicon oxide after exposition/bake treatment. It is compatible with conventional front-end silicon technology devices manufacturing and presents excellent gap/cavity fill and planarization performances. Finally, its compatibility with EUV radiation [6] paves the way to the end of the semiconductor roadmap.
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