METHOD FOR APPLYING HSQ(HYDROGEN SILSESQUIOXANE) TO HIGH TOPOLOGY METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: having lower pattern layout using all IMD layers even pattern of HSQ materials using HSQ (hydrogen silsesquioxane) to high topological metal wiring of semiconductor device is more than 1 micron. CONSTITUTION: forming a part in figure (10) is metal wire by using dry etching, a part of (12) insulating layer is formed on a semiconductor substrate, (14) HSQ (hydrogen silsesquioxane) layer insulating is formd, and forms (16) insulating layer hsq layer again. Therefore, the performance (passing through 4-metal) of semiconductor devices needs to increase low dielectric layer.