The Effects of Wet Surface Treatments on Amorphous Silicon Annealing and Gate Breakdown Voltage

摘要

The formation of CMOS transistors requires the integration of several steps including deposition, annealing, cleaning, and patterning. This paper investigates the nature of the interface between amorphous silicon (a-Si) and silicon nitride (Si_3N_4), and its impact on the gate breakdown voltage. It has been found that a continuous native oxide between a-Si and Si_3N_4 is critical in preventing the agglomeration of silicon during high temperature annealing.