Synthesis of MAX phase (Cr,V)_2AIC thin films

摘要

Multiple target magnetron sputtering technique was employed for the deposition of (Cr,V)_2AlC thin films, on the substrate of Si<100> wafer at temperatures ranging from ambient to 840 K. The chemical composition and crystal structure of the deposited thin films were analyzed, surfaces as well the cross sections observed. The experimental results demonstrated that the temperature of the substrate does not affect the chemical composition of the deposited thin films. Deposition at room temperature or moderate elevated temperatures was found to result in amorphous films, whereas crystalline MAX phase thin films were obtained at high temperature. The transition of the substrate temperature was found to be around 743 K. The thin films deposited at temperatures below the transition showed the featureless flat surfaces. At high substrate temperatures, crystalline MAX thin films were formed. When deposited at temperatures near the transition, amorphous/nanocrystalline double layer thin films were deposited.