LOW-TEMPERATURE GROWN InN FILMS BASED ON SAPPHIRE SUBSTRATE WITH ECR-PLASMA ENHANCED MOCVD

摘要

Prefer-oriented and fine grained polycrystalline InN films are deposited on sapphire substrate using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low-temperature. Trimethyl indium (TMIn) and N_2 are applied as precursors for In and N, respectively. The influence of deposition temperature on the structural, electrical and morphological properties of InN films is systematically investigated by x-ray diffraction analysis (XRD), Hall Effect measurement (HL5500) and atomic force microscopy (AFM). The results show that the as-grown InN films with smooth surface roughness of 4.59nm and preferred orientation are successfully achieved at the optimized deposition temperature of 450 °C, which was low temperature here. The InN films reported here will provide various opportunities for the development of high efficiency and high performance semiconductor devices based on InN materials.