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Structural, Morphological, Optical and Photocatalytic Properties of Os and N Co-Doped TiO_2 Films

机译:OS和N掺杂TiO_2薄膜的结构,形态学,光学和光催化性能

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In the present work, Os and N co-doped TiO_2 films were first prepared using a reactive RF magnetron sputtering of Ti-Os metallic target. The effect of Os concentration varying from 0 to 3.0at.% on structure as well as morphology and subsequent changes in optical and photocatalytic properties were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), optical absorption spectra and photoluminescence (PL) spectroscopy. XRD and SEM results show that the co-doping of Os and N favors the crystal growth of TiO_2 and leads to a low anatase thermal stability relative to N monodoping. The band gap of the N/Os co-doped films is reduced from 3.42 eV to 3.22 eV compared with the N-TiO_2 film. PL investigation further exhibits the effects of Os doping on the electronic structures and defects in N-TiO_2.The photocatalytic activities of the films were evaluated by the degradation of methylene blue in aqueous solution under UV light. It was found that the photocatalytic activity increases with increasing Os content first, and then decreases after the optimal Os content. Therefore, the photocatalytic activity of Os/N co-modified TiO_2 photocatalysts can be adjusted by the Os content.
机译:在本作工作中,首先使用Ti-OS金属靶的反应性RF磁控溅射制备OS和N共掺杂TiO_2膜。通过X射线衍射(XRD)研究了OS浓度从0到3.0AT的影响。通过X射线衍射(XRD),扫描电子显微镜(SEM),原子力显微镜(AFM ),X射线光电子能谱(XPS),光学吸收光谱和光致发光(PL)光谱。 XRD和SEM结果表明,OS和N的共同掺杂有利于TiO_2的晶体生长,并导致相对于N单开的低锐钛矿热稳定性。与N-TiO_2薄膜相比,N / O共掺杂薄膜的带隙从3.42eV降低至3.22eV。 PL调查进一步表现出OS掺杂对N-TiO_2的缺陷的影响。通过在UV光下的水溶液中的亚甲基蓝的降解来评价薄膜的光催化活性。发现光催化活性随着OS含量的增加而增加,然后在最佳OS内容后降低。因此,可以通过OS含量调节OS / N共改性TiO_2光催化剂的光催化活性。

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