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Size-Dependent Photoelectrochemical Properties of Nanostructured WO_3 Thin Films Synthesized via Electrodeposition Method

机译:纳米结构WO_3薄膜的尺寸依赖性光电化学性能通过电沉积法合成

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The main aim of this study was to investigate size-dependent effect on the photoelectrochemical properties of nanostructured tungsten trioxide (WO_3) thin films synthesized via electrochemical method. Firstly, the nanostructured WO_3 thin films of different crystalline sizes were synthesized on fluorine-doped tin oxide (FTO) glass working electrodes followed by controlled annealing treatment at temperature of 100-600°C. The resultant nanostructured WO_3 thin films were further characterized using field emission-scanning electron microscopy (FE-SEM) and photocurrent density measurements. Through FE-SEM analysis, it was found that the WO_3 crystalline size increases with increasing annealing temperature that resulted in elevated photocurrent per unit area of the synthesized nanostructured WO_3 thin films. Finally, it was observed that the highest photocurrent density of up to 35μA/cm~2 was attained for WO_3 crystallines size of 86nm that formed at the annealing temperature of 600°C.
机译:本研究的主要目的是研究通过电化学方法合成的纳米结构钨(WO_3)薄膜的纳米结构氧化钨(WO_3)薄膜的尺寸依赖性影响。首先,在氟掺杂的氧化锡(FTO)玻璃加工电极上合成不同结晶尺寸的纳米结构WO_3薄膜,然后在100-600℃的温度下进行受控退火处理。使用现场发射扫描电子显微镜(Fe-SEM)和光电流密度测量,进一步表征所得纳米结构的WO_3薄膜。通过Fe-SEM分析,发现WO_3结晶尺寸随着在合成的纳米结构WO_3薄膜的每单位面积的升高的光电流中而增加的情况下增加。最后,观察到,对于在600℃的退火温度下形成的86nm的WO_3结晶尺寸的最高光电流密度最高35μA/ cm〜2。

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