首页> 外文会议>OEEM 2012 >Influence of hydrogen dilution on microstructure of μc-Si: H films
【24h】

Influence of hydrogen dilution on microstructure of μc-Si: H films

机译:氢气稀释对μC-Si:H薄膜微观结构的影响

获取原文
获取外文期刊封面目录资料

摘要

The influence of hydrogen dilution (D) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different hydrogen dilution is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with D. The crystallization ratio and grain size of the silicon thin film become larger when D is higher. However, the deposition rate is slow when the D value is too high. On this work, optimal μc-Si:H film can be obtained at D of about 98% in the suitable experimental conditions.
机译:通过PECVD技术研究了PECVD技术研究制备的氢稀释度(D)对玻璃/不锈钢的内在非晶/微晶硅薄膜。研究了不同氢稀释硅薄膜的结晶比和晶粒尺寸。结果表明,硅薄膜的结晶比和晶粒尺寸随着D而变化。当D较高时,硅薄膜的结晶比和晶粒尺寸变大。但是,当D值太高时,沉积速率很慢。在这项工作中,可以在合适的实验条件下在D约98%的D中获得最佳μC-Si:H膜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号