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Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution

机译:在不同氢气稀释下沉积的a-Si:H薄膜PECVD的微观结构相关表征

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摘要

We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma -enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samplesdeposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains ofseveral nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmedincreasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.
机译:我们报告了通过在宽稀释范围内用氢稀释的硅烷通过等离子体增强化学气相沉积(PECVD)沉积的氢化硅薄膜的结构和光学性质。稀释度低于30的样品被检测为非晶氢化硅(a-Si:H),其晶粒大小为几纳米,代表a-Si:H的中等范围。光学表征证实,随着稀释度的增加,顺序增加。观察到光学带隙是稀释度的增加函数。

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