机译:硅烷氦稀释对HW-CVD沉积的氢化纳米晶硅(nc-Si:H)薄膜的微观结构和光电性能的影响
School of Energy Studies, University of Pune, Pune 411 007, India;
School of Energy Studies, University of Pune, Pune 411 007, India;
School of Energy Studies, University of Pune, Pune 411 007, India;
School of Energy Studies, University of Pune, Pune 411 007, India;
Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008, India;
UCC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India;
Department of Physics, University of Pune, Pune 411 007, India;
Department of Physics, University of Pune, Pune 411 007, India;
A. Thin films; C. Atomic force microscopy; C. Raman spectroscopy; C. X-ray diffraction; D. Microstructure;
机译:沉积参数对HW-CVD氢化纳米晶硅薄膜微结构和光电性能的影响
机译:HW-CVD法制备的氢化纳米晶硅(nc-Si:H)薄膜中氦诱导的结构无序
机译:氢稀释对通过等离子体增强化学气相沉积(PE-CVD)制备的氢化纳米晶硅(nc-Si:H)薄膜的结构,电学和光学性质的影响
机译:共沉积混合相氢化无定形/纳米晶硅薄膜的光学电气性能
机译:薄膜光伏电池中使用的氢化纳米晶硅的结构和电子特性。
机译:晶体结构表面/界面微观结构与纳米铌薄膜的电性能的相关性
机译:HW-CVD法制备的氢化纳米晶硅(nc-Si:H)薄膜中氦诱导的结构无序
机译:衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响