Hydrogen interaction with HfO_2 films deposited on Ge(100) and Si(100)

摘要

In the present work we investigated the thermally-driven hydrogen incorporation in HfO_2 films deposited on Si and Ge substrates. Two incorporation regimes were identified, one in the 200-400°C temperature range and another one in the 400-600°C temperature range. D incorporation was higher for films deposited on Si for all investigated temperatures, indicating a higher density of sites for D incorporation, probably near the HfO_2/Si interface. HfO_2 films undergo structural changes during annealing in the high temperature regime, crystallizing in the monoclinic and in the cubic phase. No oxygen or hafnium desorption were observed after annealings, as well as no Ge incorporation in the HfO_2 film.