Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon

摘要

The electrical and physical properties of ErSi_x on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSi_x depend on the Si surface orientation. And the ErSi_x crystallinity affects the work function of ErSi_x. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.