Mn Silicide Nanowires on the Si(001)-2×1 Surface Having Anisotropic Strain Fields with Bi Nanolines

摘要

The technique of producing new nanomaterial structures has been examined by making into a template the bismuth nanolines formed on silicon (001) surfaces. By this method, we succeeded in manganese forming its silicide wire by applying anisotropic strain using the tensile stress which arises between bismuth nanolines. The anisotropic surface stress blocks the formation of embedded structures and stabilizes the nucleation of manganese silicide islands which grow in a preferred direction at the growth temperature of 450 °C, forming nanowires with a band gap of approximately 0.6 eV, matching the reported band gap of MnSi_(1.7) and not that of MnSi.