Chemical Vapor Deposition of Silicon by the Reaction of Bromosilanes and Hydrogen

摘要

Chemical processes occurring in the vapor deposition of silicon from a mixture of bromosilanes (SiHBr_3:SiBr_4 = 1:4) with hydrogen gas have been monitored by means of online gas chromatography, and the obtained deposits were characterized by XRD, SEM, and EDX techniques. The deposition of silicon occurred at 900 °C, accompanied by the larger consumption of SiBr_4 than SiHBr_3. The numerous rugged rod-like deposits of poly-silicon were grown appearing the crystal diffractions of (111), (220), (311), and (331) planes. The diameter of deposits mainly ranged from 2 to 4 μm and their lengths extended to about 10 μm.